Comparison Between Dry And Wet Process For Sapphire Etching Comparison Between Dry And Wet Process For Sapphire Etching December 15 Ali Krieger Jersey , 2013 | Author: Paul Drake | Posted in Business
Dry and Wet Etching are two popular processes that are being used for the production of patterned sapphire substrate. Having said that, it makes sense to understand the difference between the two so that you can determine which particular process suits best to your unique needs. So, I have prepared below some sort of comparison between the two processes.
- the most popular method used by manufacturing companies to etch sapphire substrates and it has a very slow process with a low throughput rate;
- Etching a standard 2-inch wafer can take between 30 and 60 minutes;
- experts say that it does not scale effectively; as wafer size increases, throughput of a dry etcher falls because fewer wafers fit inside the vacuum chamber. This results to the use of more expensive plasma etching tools to attain the same throughput as achieved using smaller wafers;
- as an estimate, dry etching rates range between 50nm and 200nm per minute is attainable;
- dry etching creates bright and efficient LEDs but the process takes it so slow and limited throughput.
- it has the advantage of being an extremely fast process and it can be carried out in a lot cheaper procedure than dry etching;
- the LEDs that are produced using wet etching process are not as efficient and effective as that of the dry etching process; however, it is very scalable.
- wet etching process provides a cost-saving advantage compared to dry etching;
- polishing touch-up work is performed on the wafers in order to increase light extraction efficiency.
Sample of equipment utilized in sapphire etching process:
The Accubath Xe-Series r12; designed to perform a wet etching process; this etching bath equipment has been proven to be a great help for semiconductor manufacturers as it helps improve the processes that were previously thought to be too slow due to temperature limitations. This equipment is developed by Imtec Acculine.
Hitachi High-tech Silicon Etch System r12; this equipment is capable of generating a stable high density plasma at a very low pressure; it is utilized in dry etching based on an ECR (*1) plasma source.
CDE-80N Chemical Dry Etching Equipment r12; used chemical dry etching process for thin film in a gaseous state semiconductor process. Damage-free etching process, through perfect separation of the etching unit and plasma generating unit, enables wide use in the damage removal process.
Each of the etching processes discussed above has its own advantages and disadvantages. But Alex Morgan Jersey , just like any other processes, select the one you think can improve your bottom-line r12; profit.
Paul Drake writes a wide array of industry-related topics such as etching sapphire equipment. He utilizes his years of work experience in a high tech industry in writing useful resources. To learn more about wet etching process, visit Imtec Acculine official website.
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